Ion Implantation Method For Si Wafer Fabrication

Ion implantation is a material engineering process. In this method ions are accelerated in an electrical field and impacted into a solid. This process is used to change electrical and physical properties for semiconductor device fabrication. 

This method was developed for producing the p-n junction of photovoltaic devices. It can also be used for making pulsed-electron beam for rapid annealing. Ion implantation is a very popular process because it provides more precise control of dopant in comparison to diffusion. Ion-implanted species relies on a rapid thermal annealing technique.

The ions alter the elemental composition of the target. Many chemical and physical changes are done to change the structural properties of the crystal. Since the masses of the ions are similar to target atoms, they knock the target atoms from their place.

This method allows movement of impurity atoms within the crystal structure. Thus, diffusion process has become less important than methods for introducing impurities into Silicon Wafer Pricing.

Benefits of Ion Implantation Method of Silicon Wafer Fabrication:

•             Provides precise control over the density of dopant deposited onto the wafer.
•             Improvement in the quality of ICs.
•             Helps in achieving very large values of sheet resistance.
•             High sheet resistance value is helpful in gaining large resistor value.
•             Assist in low temperature Ion-implantation.
•             Enables Reduced tendency for lateral spreading of wafers.
•             Helpful in adjustment of the threshold voltage of MOSFET’s.

This method is utilized by some of the prominent Silicon Wafer Supplier, for preparing silicon wafers from conventional silicon substrates. Within the past few years, it has become a very powerful tool for Semiconductor Fabrication. Its attributes of controllability and reproducibility makes it a very versatile tool.