Tuesday, 6 September 2016

Ion Implantation Method For Si Wafer Fabrication

Ion implantation is a material engineering process. In this method ions are accelerated in an electrical field and impacted into a solid. This process is used to change electrical and physical properties for semiconductor device fabrication. 

This method was developed for producing the p-n junction of photovoltaic devices. It can also be used for making pulsed-electron beam for rapid annealing. Ion implantation is a very popular process because it provides more precise control of dopant in comparison to diffusion. Ion-implanted species relies on a rapid thermal annealing technique.

The ions alter the elemental composition of the target. Many chemical and physical changes are done to change the structural properties of the crystal. Since the masses of the ions are similar to target atoms, they knock the target atoms from their place.

This method allows movement of impurity atoms within the crystal structure. Thus, diffusion process has become less important than methods for introducing impurities into Silicon Wafer Pricing.

Benefits of Ion Implantation Method of Silicon Wafer Fabrication:
  •             Provides precise control over the density of dopant deposited onto the wafer.
  •             Improvement in the quality of ICs.
  •             Helps in achieving very large values of sheet resistance.
  •             High sheet resistance value is helpful in gaining large resistor value.
  •             Assist in low temperature Ion-implantation.
  •             Enables Reduced tendency for lateral spreading of wafers.
  •             Helpful in adjustment of the threshold voltage of MOSFET’s.


This method is utilized by some of the prominent Silicon Wafer Supplier, for preparing silicon wafers from conventional silicon substrates. Within the past few years, it has become a very powerful tool for Semiconductor Fabrication. Its attributes of controllability and reproducibility makes it a very versatile tool.


Monday, 5 September 2016

Classification of Semiconductor: Intrinsic and Extrinsic

The silicon is the heart of any electronic Industry. Semiconductors have a vast impact on our society. These lies at the heart of microprocessor, chips and transistor industry. The semiconductors are the compound which has a good electrical conductance, generally intermediary between the insulator and a conductor. These are the basic component of various kinds of electronic circuit and device used in communications, Information technology and in computers.

Classification of Semiconductor:

Semiconductors come in a variety of designs and types. They can be classified as per their dopant types. This article explains all these differences in detail, Two basic kinds of semiconductors are:

Intrinsic Semiconductors

The pure form of semiconductor is called as intrinsic semiconductor. It can also be stated as semiconductor is which conduction band have equal number of holes and electron ration.

These have very minute forbidden energy gap. The energy available at room temperature is enough for the valence electrons to jump across the conduction band. Another characteristic feature is that the Fermi level. Their Fermi Level lies in between the valence band and the conduction band. 4"Silicon Wafers is best known example of intrinsic semiconductors.

Extrinsic Semiconductors


In these semiconductors the pure state is deliberately diluted by adding impurities into it. Such  impurities when added to 100mm Silicon Wafers, are known as doping agents or dopant. The materials chosen for doping either have 5 electrons or 3 electrons in their valence shell. Such,  dopants are either known as pentavalent or trivalent dopant.